FDS8960C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Max Power Dissipation :

2W

Transistor Element Material :

SILICON

Terminal Position :

Dual

Radiation Hardening :

No

Number of Elements :

2

Length :

4.9mm

Mounting Type :

Surface Mount

Power - Max :

900mW

Fall Time (Typ) :

5 ns

Dual Supply Voltage :

35V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Width :

3.9mm

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

7A

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Number of Channels :

2

Termination :

SMD/SMT

Threshold Voltage :

1V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2005

Pbfree Code :

yes

Current Rating :

7A

Continuous Drain Current (ID) :

7A

RoHS Status :

RoHS Compliant

Nominal Vgs :

2 V

Power Dissipation :

2W

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

35V

Mount :

Surface Mount

Resistance :

24mOhm

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

7A 5A

Height :

1.75mm

Turn-Off Delay Time :

20 ns

FET Type :

N and P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

PowerTrench®

Rise Time :

16ns

Weight :

230.4mg

Number of Terminations :

8

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

Additional Feature :

FAST SWITCHING

JESD-609 Code :

e3

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 5V

Gate to Source Voltage (Vgs) :

25V