FDS8960C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Published :

2005

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 15V

Max Power Dissipation :

2W

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Contact Plating :

Tin

FET Type :

N and P-Channel

Rise Time :

16ns

Series :

PowerTrench®

Length :

4.9mm

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

7A 5A

Terminal Form :

Gull wing

Nominal Vgs :

2 V

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 5V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

24m Ω @ 7A, 10V

Width :

3.9mm

Continuous Drain Current (ID) :

7A

Transistor Element Material :

SILICON

Weight :

230.4mg

Packaging :

Tape and Reel (TR)

Additional Feature :

FAST SWITCHING

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

25V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power Dissipation :

2W

Resistance :

24mOhm

Threshold Voltage :

1V

Power - Max :

900mW

Mounting Type :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Current Rating :

7A

REACH SVHC :

No SVHC

FET Feature :

Logic Level Gate

Drain Current-Max (Abs) (ID) :

7A

Fall Time (Typ) :

5 ns

ECCN Code :

EAR99

Dual Supply Voltage :

35V

Height :

1.75mm

Radiation Hardening :

No

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Number of Channels :

2

Drain to Source Breakdown Voltage :

35V