FDS8958B
- Mfr.Part #
- FDS8958B
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N/P-CH 30V 6.4/4.5A 8SOIC
- Stock
- 8,891
- In Stock :
- 8,891
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Type :
- N and P-Channel
- FET Feature :
- Logic Level Gate
- Continuous Drain Current (ID) :
- 4.5A
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 26m Ω @ 6.4A, 10V
- Transistor Element Material :
- SILICON
- Published :
- 2017
- Width :
- 3.9mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Series :
- PowerTrench®
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 540pF @ 15V
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 6ns
- Weight :
- 187mg
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Threshold Voltage :
- 2V
- Factory Lead Time :
- 18 Weeks
- Number of Terminations :
- 8
- Pbfree Code :
- yes
- Resistance :
- 26mOhm
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 6 ns
- Number of Pins :
- 8
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Height :
- 1.575mm
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Drain Current-Max (Abs) (ID) :
- 6.4A
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 6.4A 4.5A
- Max Power Dissipation :
- 900mW
- JESD-609 Code :
- e3
- Number of Elements :
- 2
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 25V
- Turn-Off Delay Time :
- 17 ns
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 4.9mm
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- Power Dissipation :
- 1.6W
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDS8958B
FDS8958B Documents

FDS8958B datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS8958B Description
These dual N-channel and P-channel enhanced mode power field effect transistors are produced using advanced PowerTritch manufacturing processes that are customized to minimize on-resistance while maintaining excellent switching performance.
These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.
FDS8958B Features
Q1 N-Channel
Max. RDS(on) = 26 m|? at VGS = 10 V, ID = 6.4 A
Max. RDS(on) = 39 m|? at VGS = 4.5 V, ID = 5.2 A
Q2 P-Channel
Max. RDS(on) = 51 m|? at VGS = -10 V, ID = -4.5 A
Max. RDS(on) = 80 m|? at VGS = -4.5 V, ID = -3.3 A
HBM ESD protection level > 3.5 kV
RoHS Compliant
FDS8958B Applications
This product is general usage and suitable for many different applications.
DC-DC Conversion
BLU and Motor Drive Inverter
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