FDS8958B

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Mfr.Part #
FDS8958B
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N/P-CH 30V 6.4/4.5A 8SOIC
Stock
8,891
In Stock :
8,891

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
FET Type :
N and P-Channel
FET Feature :
Logic Level Gate
Continuous Drain Current (ID) :
4.5A
Polarity/Channel Type :
N-CHANNEL AND P-CHANNEL
FET Technology :
METAL-OXIDE SEMICONDUCTOR
REACH SVHC :
No SVHC
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
26m Ω @ 6.4A, 10V
Transistor Element Material :
SILICON
Published :
2017
Width :
3.9mm
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Series :
PowerTrench®
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
540pF @ 15V
Packaging :
Tape and Reel (TR)
Rise Time :
6ns
Weight :
187mg
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Threshold Voltage :
2V
Factory Lead Time :
18 Weeks
Number of Terminations :
8
Pbfree Code :
yes
Resistance :
26mOhm
Terminal Finish :
Tin (Sn)
Fall Time (Typ) :
6 ns
Number of Pins :
8
Vgs(th) (Max) @ Id :
3V @ 250µA
Height :
1.575mm
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Drain Current-Max (Abs) (ID) :
6.4A
Terminal Position :
Dual
Current - Continuous Drain (Id) @ 25°C :
6.4A 4.5A
Max Power Dissipation :
900mW
JESD-609 Code :
e3
Number of Elements :
2
Mounting Type :
Surface Mount
Mount :
Surface Mount
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
25V
Turn-Off Delay Time :
17 ns
Operating Mode :
ENHANCEMENT MODE
Length :
4.9mm
Drain to Source Breakdown Voltage :
30V
Terminal Form :
Gull wing
Power Dissipation :
1.6W
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDS8958B from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Terminations:8, Number of Pins:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDS8958B pinout, FDS8958B datasheet PDF, FDS8958B amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDS8958B ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS8958B


FDS8958B datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDS8958B            Description


  These dual N-channel and P-channel enhanced mode power field effect transistors are produced using advanced PowerTritch manufacturing processes that are customized to minimize on-resistance while maintaining excellent switching performance.

These devices are ideal for low-voltage and battery-powered applications that require low series power consumption and fast switching.

 

FDS8958B           Features

 

Q1 N-Channel

Max. RDS(on) = 26 m|? at VGS = 10 V, ID = 6.4 A

Max. RDS(on) = 39 m|? at VGS = 4.5 V, ID = 5.2 A

Q2 P-Channel

Max. RDS(on) = 51 m|? at VGS = -10 V, ID = -4.5 A

Max. RDS(on) = 80 m|? at VGS = -4.5 V, ID = -3.3 A

HBM ESD protection level > 3.5 kV

RoHS Compliant


FDS8958B               Applications

This product is general usage and suitable for many different applications.

DC-DC Conversion

BLU and Motor Drive Inverter

 





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