FDS8958B

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

900mW

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Threshold Voltage :

2V

Mounting Type :

Surface Mount

Weight :

187mg

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Width :

3.9mm

Number of Pins :

8

Rise Time :

6ns

Turn-Off Delay Time :

17 ns

Factory Lead Time :

18 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

26m Ω @ 6.4A, 10V

Drain Current-Max (Abs) (ID) :

6.4A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 15V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N and P-Channel

Operating Temperature :

-55°C~150°C TJ

Resistance :

26mOhm

Continuous Drain Current (ID) :

4.5A

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Power Dissipation :

1.6W

Current - Continuous Drain (Id) @ 25°C :

6.4A 4.5A

Radiation Hardening :

No

Number of Terminations :

8

Fall Time (Typ) :

6 ns

JESD-609 Code :

e3

Terminal Form :

Gull wing

Terminal Position :

Dual

REACH SVHC :

No SVHC

Length :

4.9mm

Published :

2017

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

25V

Height :

1.575mm

Drain to Source Breakdown Voltage :

30V