FDS8958A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Avalanche Energy Rating (Eas) :

54 mJ

Terminal Form :

Gull wing

Fall Time (Typ) :

9 ns

Continuous Drain Current (ID) :

7A

Height :

1.5mm

REACH SVHC :

No SVHC

Resistance :

28mOhm

Turn-Off Delay Time :

14 ns

FET Type :

N and P-Channel

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 15V

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Dual Supply Voltage :

30V

Power Dissipation :

2W

Termination :

SMD/SMT

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

7A 5A

Power - Max :

900mW

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

Min Operating Temperature :

-55°C

Factory Lead Time :

18 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Current Rating :

7A

Rds On (Max) @ Id, Vgs :

28m Ω @ 7A, 10V

JESD-609 Code :

e3

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Rise Time :

13ns

Drain Current-Max (Abs) (ID) :

7A

FET Feature :

Logic Level Gate

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Max Operating Temperature :

150°C

Max Power Dissipation :

2W

Threshold Voltage :

1.9V

Contact Plating :

Tin

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Nominal Vgs :

1.9 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

4mm

RoHS Status :

ROHS3 Compliant