FDS8958A
- Mfr.Part #
- FDS8958A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 7
- Stock
- 21,741
- In Stock :
- 21,741
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 7A
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Continuous Drain Current (ID) :
- 7A
- Contact Plating :
- Tin
- Rise Time :
- 13ns
- Number of Pins :
- 8
- Resistance :
- 28mOhm
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Rds On (Max) @ Id, Vgs :
- 28m Ω @ 7A, 10V
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance (Ciss) (Max) @ Vds :
- 575pF @ 15V
- Terminal Position :
- Dual
- Number of Terminations :
- 8
- Number of Elements :
- 2
- Published :
- 2007
- Factory Lead Time :
- 18 Weeks
- Min Operating Temperature :
- -55°C
- FET Type :
- N and P-Channel
- Power - Max :
- 900mW
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4mm
- Current Rating :
- 7A
- Series :
- PowerTrench®
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Logic Level Gate
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 9 ns
- Drain to Source Breakdown Voltage :
- 30V
- REACH SVHC :
- No SVHC
- Termination :
- SMD/SMT
- Max Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- Power Dissipation :
- 2W
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- 1.9V
- Nominal Vgs :
- 1.9 V
- Turn-Off Delay Time :
- 14 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Dual Supply Voltage :
- 30V
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 5mm
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 7A 5A
- Height :
- 1.5mm
- Datasheets
- FDS8958A
FDS8958A Documents

FDS8958A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDS8958A Description
The FDS8958A is a 30V Dual N-channel and P-channel PowerTrench? MOSFET that has been specially tailored to minimize the on-state resistance and to maintain a low gate charge for superior switching performance. The medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes to fast switching for synchronous rectification in AC/DC power supplies. It employs a shielded-gate structure that provides a charge balance.
FDS8958A Features
-
Fast switching speed
-
High power and handling capability in a widely used surface mount package
-
· Q1: N-Channel
-
7.0A, 30V RDS(on) = 0.028W @ VGS = 10V
-
RDS(on) = 0.040W @ VGS = 4.5V
-
· Q2: P-Channel
-
-5A, -30V RDS(on) = 0.052W @ VGS = -10V
-
RDS(on) = 0.080W @ VGS = -4.5V
FDS8958A Applications
-
Battery powered applications
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