FDS8958

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Terminal Position :

Dual

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

6.4A

Threshold Voltage :

2V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

FET Type :

N and P-Channel

Width :

3.9mm

Drain to Source Breakdown Voltage :

30V

FET Feature :

Logic Level Gate

Factory Lead Time :

18 Weeks

Pbfree Code :

yes

Turn-Off Delay Time :

17 ns

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 15V

Weight :

187mg

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

4.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Terminations :

8

Height :

1.575mm

Published :

2017

Fall Time (Typ) :

6 ns

Number of Pins :

8

JESD-609 Code :

e3

Number of Elements :

2

Lead Free :

Lead Free

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

1.6W

Rise Time :

6ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Length :

4.9mm

Resistance :

26mOhm

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

26m Ω @ 6.4A, 10V

Max Power Dissipation :

900mW

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

6.4A 4.5A

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No