FDS8949

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

3 ns

Rds On (Max) @ Id, Vgs :

29m Ω @ 6A, 10V

FET Feature :

Logic Level Gate

Resistance :

29mOhm

Drain to Source Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

2

Nominal Vgs :

1.9 V

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Dual Supply Voltage :

40V

Voltage - Rated DC :

40V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

5ns

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

955pF @ 20V

Threshold Voltage :

1.9V

Number of Terminations :

8

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Weight :

187mg

Packaging :

Tape and Reel (TR)

Series :

PowerTrench®

Turn-Off Delay Time :

23 ns

Mounting Type :

Surface Mount

Width :

4mm

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Height :

1.5mm

Turn On Delay Time :

9 ns

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

2W

Termination :

SMD/SMT

FET Type :

2 N-Channel (Dual)

Number of Pins :

8

Length :

5mm

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Continuous Drain Current (ID) :

6A

Element Configuration :

Dual

Power Dissipation :

2W

Current Rating :

6A

Drain Current-Max (Abs) (ID) :

6A