FDS8934A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

20A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

55m Ω @ 4A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4A

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

8

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

2 P-Channel (Dual)

Drain Current-Max (Abs) (ID) :

4A

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Terminal Form :

Gull wing

Qualification Status :

COMMERCIAL

Surface Mount :

yes

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

1130pF @ 10V

JESD-30 Code :

R-PDSO-G8

Terminal Finish :

MATTE TIN

Power - Max :

900mW

Drain-source On Resistance-Max :

0.065Ohm

Number of Terminations :

8

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount