FDS8928A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

5.5A

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

2W

Drain to Source Voltage (Vdss) :

30V 20V

Terminal Form :

Gull wing

Width :

4mm

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.5A, 4.5V

Current Rating :

5.5A

REACH SVHC :

No SVHC

Max Power Dissipation :

2W

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Radiation Hardening :

No

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Resistance :

30mOhm

Number of Pins :

8

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

90 ns

Number of Elements :

2

FET Type :

N and P-Channel

Threshold Voltage :

670mV

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power - Max :

900mW

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Length :

5mm

Mount :

Surface Mount

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

Rise Time :

23ns

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Weight :

230.4mg

ECCN Code :

EAR99

Height :

1.5mm

Current - Continuous Drain (Id) @ 25°C :

5.5A 4A

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

260 ns

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

670 mV