FDS8926A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

MATTE TIN

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

5.5A

DS Breakdown Voltage-Min :

30V

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.5A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

5.5A

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.03Ohm

Mounting Type :

Surface Mount

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 10V

Power - Max :

900mW

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

20A

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Terminations :

8

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)