FDS89161LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Number of Elements :

2

Drain-source On Resistance-Max :

0.105Ohm

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

302pF @ 50V

FET Feature :

Standard

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

10 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

13 mJ

Factory Lead Time :

13 Weeks

Continuous Drain Current (ID) :

2.7A

Element Configuration :

Dual

Number of Pins :

8

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Additional Feature :

ULTRA-LOW RESISTANCE

Gate Charge (Qg) (Max) @ Vgs :

5.3nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Max Power Dissipation :

1.6W

ECCN Code :

EAR99

Length :

4.9mm

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.7A, 10V

Height :

1.575mm

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Weight :

187mg

Width :

3.9mm

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

15A

Power Dissipation :

31W

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain to Source Voltage (Vdss) :

100V

Turn-Off Delay Time :

9.5 ns

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2006

JESD-609 Code :

e3

Series :

PowerTrench®

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

10ns

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

3.8 ns

Radiation Hardening :

No