FDS89161

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Power - Max :

1.6W

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.7A, 10V

Width :

5mm

Drain-source On Resistance-Max :

0.105Ohm

Input Capacitance (Ciss) (Max) @ Vds :

210pF @ 50V

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 10V

Weight :

187mg

Lead Free :

Lead Free

Max Power Dissipation :

31W

Height :

1.5mm

Rise Time :

1.3ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

11 Weeks

Turn On Delay Time :

4.2 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Continuous Drain Current (ID) :

2.7A

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Threshold Voltage :

3V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Feedback Cap-Max (Crss) :

5 pF

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

8

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Turn-Off Delay Time :

7.3 ns

JESD-609 Code :

e3

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Length :

4mm

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Power Dissipation :

3.1W

Series :

PowerTrench®

Fall Time (Typ) :

1.9 ns

Number of Elements :

2