FDS89161

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Mfr.Part #
FDS89161
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET 2N-CH 100V 2.7A 8SOIC
Stock
16,958
In Stock :
16,958

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Factory Lead Time :
11 Weeks
Series :
PowerTrench®
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
7.3 ns
ECCN Code :
EAR99
Number of Terminations :
8
Pbfree Code :
yes
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Drain to Source Voltage (Vdss) :
100V
RoHS Status :
ROHS3 Compliant
Height :
1.5mm
Lead Free :
Lead Free
Feedback Cap-Max (Crss) :
5 pF
Max Power Dissipation :
31W
Rds On (Max) @ Id, Vgs :
105m Ω @ 2.7A, 10V
Element Configuration :
Dual
JESD-609 Code :
e3
FET Type :
2 N-Channel (Dual)
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power - Max :
1.6W
Terminal Finish :
Tin (Sn)
Threshold Voltage :
3V
FET Feature :
Standard
Number of Pins :
8
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Input Capacitance (Ciss) (Max) @ Vds :
210pF @ 50V
Terminal Form :
Gull wing
Lifecycle Status :
ACTIVE (Last Updated: 6 days ago)
Gate Charge (Qg) (Max) @ Vgs :
4.1nC @ 10V
Length :
4mm
Mount :
Surface Mount
Drain to Source Breakdown Voltage :
100V
Number of Elements :
2
Mounting Type :
Surface Mount
Width :
5mm
REACH SVHC :
No SVHC
Weight :
187mg
Transistor Application :
SWITCHING
Power Dissipation :
3.1W
Fall Time (Typ) :
1.9 ns
Continuous Drain Current (ID) :
2.7A
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate to Source Voltage (Vgs) :
20V
Drain-source On Resistance-Max :
0.105Ohm
Turn On Delay Time :
4.2 ns
Rise Time :
1.3ns
Transistor Element Material :
SILICON
Operating Temperature :
-55°C~150°C TJ
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDS89161 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, FDS89161 pinout, FDS89161 datasheet PDF, FDS89161 amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDS89161 ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS89161


FDS89161 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDS89161    Description


This N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance and ruggedness.

 

FDS89161     Features

 

Shielded Gate MOSFET Technology

Max rDS(on) = 105 mΩat VGS= 10 V, ID = 2.7 A

Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.1 A

High performance trench technology for extremely low rDS(on)

High power and current handling capability in a widely used surface mount package

100% UIL Tested

RoHS Compliant


FDS89161      Applications


This product is general usage and suitable for many different applications.

Synchronous Rectifier

Primary Switch for Bridge Topology

 





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