FDS8858CZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

16 ns

FET Type :

N and P-Channel

Drain to Source Breakdown Voltage :

-60V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Lead Free :

Lead Free

Power Dissipation :

2W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

17m Ω @ 8.6A, 10V

Threshold Voltage :

1.6V

Length :

5mm

Height :

1.5mm

Number of Terminations :

8

Terminal Finish :

Tin (Sn)

Nominal Vgs :

1.6 V

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

8.6A

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Form :

Gull wing

Turn-Off Delay Time :

33 ns

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Published :

2006

Mount :

Surface Mount

Series :

PowerTrench®

JESD-609 Code :

e3

Termination :

SMD/SMT

Resistance :

17mOhm

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

25V

Weight :

187mg

ECCN Code :

EAR99

Width :

4mm

Terminal Position :

Dual

Dual Supply Voltage :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

18 Weeks

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

1205pF @ 15V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

8.6A 7.3A

Max Power Dissipation :

900mW