FDMB3900AN

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Length :

3mm

Transistor Application :

SWITCHING

Mount :

Surface Mount

FET Type :

2 N-Channel (Dual)

Drain Current-Max (Abs) (ID) :

7A

Fall Time (Typ) :

3 ns

Package / Case :

8-PowerWDFN

Continuous Drain Current (ID) :

7A

Height :

750μm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drain to Source Voltage (Vdss) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

FET Feature :

Logic Level Gate

Number of Terminations :

6

Mounting Type :

Surface Mount

Weight :

60μg

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-N6

Turn On Delay Time :

6 ns

Case Connection :

DRAIN

Number of Pins :

8

Width :

1.9mm

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

15 ns

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

25V

Additional Feature :

ULTRA-LOW RESISTANCE

Number of Elements :

2

Factory Lead Time :

23 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

890pF @ 13V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

23m Ω @ 7A, 10V

Pbfree Code :

yes

Power Dissipation :

1.6W

Series :

PowerTrench®

JESD-609 Code :

e4

ECCN Code :

EAR99

Max Power Dissipation :

800mW

Rise Time :

3ns