FDMB3800N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e4

Fall Time (Typ) :

5 ns

Package / Case :

8-PowerWDFN

Factory Lead Time :

23 Weeks

Terminal Finish :

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Max Power Dissipation :

1.6W

Number of Terminations :

8

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

1.6W

Input Capacitance (Ciss) (Max) @ Vds :

465pF @ 15V

Resistance :

40mOhm

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 5V

Length :

3mm

Rise Time :

5ns

Width :

1.9mm

Power - Max :

750mW

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Weight :

47mg

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

1.9 V

Radiation Hardening :

No

Series :

PowerTrench®

Continuous Drain Current (ID) :

4.8A

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

REACH SVHC :

No SVHC

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Turn-Off Delay Time :

21 ns

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Feedback Cap-Max (Crss) :

60 pF

Rds On (Max) @ Id, Vgs :

40m Ω @ 4.8A, 10V

Threshold Voltage :

1.9V

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Vgs(th) (Max) @ Id :

3V @ 250µA

Turn On Delay Time :

8 ns

Height :

750μm