FDMB506P
- Mfr.Part #
- FDMB506P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 6.8A 8MLP
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 1.9W Ta
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 70A
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PDSO-N8
- Terminal Form :
- NO LEAD
- Package / Case :
- 8-PowerWDFN
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 6.8A, 4.5V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 20V
- Drain-source On Resistance-Max :
- 30Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 6.8A Ta
- Series :
- PowerTrench®
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- DS Breakdown Voltage-Min :
- 20V
- Qualification Status :
- COMMERCIAL
- Pbfree Code :
- yes
- Pin Count :
- 8
- Vgs (Max) :
- ±8V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.96pF @ 10V
- Drain Current-Max (Abs) (ID) :
- 6.8A
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Terminal Position :
- Dual
- Datasheets
- FDMB506P
P-Channel Tape & Reel (TR) 30m Ω @ 6.8A, 4.5V ±8V 2.96pF @ 10V 30nC @ 4.5V 20V 8-PowerWDFN
FDMB506P Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.96pF @ 10V.6.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 70A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
FDMB506P Features
based on its rated peak drain current 70A.
a 20V drain to source voltage (Vdss)
FDMB506P Applications
There are a lot of Rochester Electronics, LLC
FDMB506P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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