FDMB506P
- Mfr.Part #
- FDMB506P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 6.8A 8MLP
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- NO LEAD
- Current - Continuous Drain (Id) @ 25°C :
- 6.8A Ta
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- COMMERCIAL
- Drain Current-Max (Abs) (ID) :
- 6.8A
- Rds On (Max) @ Id, Vgs :
- 30m Ω @ 6.8A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Drain-source On Resistance-Max :
- 30Ohm
- Package / Case :
- 8-PowerWDFN
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 70A
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- JESD-30 Code :
- R-PDSO-N8
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.96pF @ 10V
- Drain to Source Voltage (Vdss) :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- Unknown
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 20V
- Pin Count :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation-Max :
- 1.9W Ta
- Vgs (Max) :
- ±8V
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Dual
- FET Type :
- P-Channel
- Datasheets
- FDMB506P
P-Channel Tape & Reel (TR) 30m Ω @ 6.8A, 4.5V ±8V 2.96pF @ 10V 30nC @ 4.5V 20V 8-PowerWDFN
FDMB506P Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.96pF @ 10V.6.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 70A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
FDMB506P Features
based on its rated peak drain current 70A.
a 20V drain to source voltage (Vdss)
FDMB506P Applications
There are a lot of Rochester Electronics, LLC
FDMB506P applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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