FDMB506P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Pulsed Drain Current-Max (IDM) :

70A

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

6.8A

Package / Case :

8-PowerWDFN

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.9W Ta

JESD-30 Code :

R-PDSO-N8

Reach Compliance Code :

Unknown

FET Type :

P-Channel

Terminal Position :

Dual

Pin Count :

8

Series :

PowerTrench®

Mounting Type :

Surface Mount

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Terminal Form :

NO LEAD

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Number of Elements :

1

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

30m Ω @ 6.8A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

6.8A Ta

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2.96pF @ 10V

Vgs (Max) :

±8V

Terminal Finish :

MATTE TIN

DS Breakdown Voltage-Min :

20V

Drain-source On Resistance-Max :

30Ohm

Surface Mount :

yes