FDMB506P

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Mfr.Part #
FDMB506P
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET P-CH 20V 6.8A 8MLP
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±8V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
Power Dissipation-Max :
1.9W Ta
Qualification Status :
COMMERCIAL
Pulsed Drain Current-Max (IDM) :
70A
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
8
Reach Compliance Code :
Unknown
Mounting Type :
Surface Mount
Drain Current-Max (Abs) (ID) :
6.8A
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
6.8A Ta
Pin Count :
8
Input Capacitance (Ciss) (Max) @ Vds :
2.96pF @ 10V
Series :
PowerTrench®
Terminal Finish :
MATTE TIN
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PDSO-N8
Transistor Application :
SWITCHING
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 4.5V
DS Breakdown Voltage-Min :
20V
Terminal Position :
Dual
Terminal Form :
NO LEAD
Drain-source On Resistance-Max :
30Ohm
Rds On (Max) @ Id, Vgs :
30m Ω @ 6.8A, 4.5V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
FET Type :
P-Channel
Drain to Source Voltage (Vdss) :
20V
Surface Mount :
yes
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
8-PowerWDFN
Number of Elements :
1
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Transistor Element Material :
SILICON
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMB506P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerWDFN, FDMB506P pinout, FDMB506P datasheet PDF, FDMB506P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMB506P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



P-Channel Tape & Reel (TR) 30m Ω @ 6.8A, 4.5V ±8V 2.96pF @ 10V 30nC @ 4.5V 20V 8-PowerWDFN

FDMB506P Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2.96pF @ 10V.6.8A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 70A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 20V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 20V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.

FDMB506P Features


based on its rated peak drain current 70A.
a 20V drain to source voltage (Vdss)


FDMB506P Applications


There are a lot of Rochester Electronics, LLC
FDMB506P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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