FDMB668P
- Mfr.Part #
- FDMB668P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 6.1A 8MLP
- Stock
- 10,643
- In Stock :
- 10,643
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PDSO-N8
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.085pF @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- P-Channel
- Terminal Finish :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Feedback Cap-Max (Crss) :
- 265 pF
- Surface Mount :
- yes
- Pin Count :
- 8
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 6.1A, 4.5V
- Number of Terminations :
- 8
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 20V
- Drain Current-Max (Abs) (ID) :
- 0.0061A
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Unknown
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drain-source On Resistance-Max :
- 0.035Ohm
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Series :
- PowerTrench®
- Vgs (Max) :
- ±8V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 1.9W Ta
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 6.1A Ta
- Terminal Form :
- NO LEAD
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Qualification Status :
- COMMERCIAL
- Package / Case :
- 8-PowerWDFN
- Datasheets
- FDMB668P
P-Channel Tape & Reel (TR) 35m Ω @ 6.1A, 4.5V ±8V 2.085pF @ 10V 59nC @ 10V 20V 8-PowerWDFN
FDMB668P Overview
A device's maximal input capacitance is 2.085pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 0.0061A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
FDMB668P Features
a 20V drain to source voltage (Vdss)
FDMB668P Applications
There are a lot of Rochester Electronics, LLC
FDMB668P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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