FDMB668P
- Mfr.Part #
- FDMB668P
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 6.1A 8MLP
- Stock
- 10,643
- In Stock :
- 10,643
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PowerTrench®
- Drain Current-Max (Abs) (ID) :
- 0.0061A
- JESD-30 Code :
- R-PDSO-N8
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drain to Source Voltage (Vdss) :
- 20V
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- COMMERCIAL
- Mounting Type :
- Surface Mount
- DS Breakdown Voltage-Min :
- 20V
- Power Dissipation-Max :
- 1.9W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Vgs (Max) :
- ±8V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Reach Compliance Code :
- Unknown
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 8
- Pin Count :
- 8
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- Terminal Form :
- NO LEAD
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Drain-source On Resistance-Max :
- 0.035Ohm
- Package / Case :
- 8-PowerWDFN
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 6.1A, 4.5V
- Transistor Application :
- SWITCHING
- Feedback Cap-Max (Crss) :
- 265 pF
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 6.1A Ta
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.085pF @ 10V
- Datasheets
- FDMB668P
P-Channel Tape & Reel (TR) 35m Ω @ 6.1A, 4.5V ±8V 2.085pF @ 10V 59nC @ 10V 20V 8-PowerWDFN
FDMB668P Overview
A device's maximal input capacitance is 2.085pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 0.0061A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
FDMB668P Features
a 20V drain to source voltage (Vdss)
FDMB668P Applications
There are a lot of Rochester Electronics, LLC
FDMB668P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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