FDMB668P

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Mfr.Part #
FDMB668P
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET P-CH 20V 6.1A 8MLP
Stock
10,643
In Stock :
10,643

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
1V @ 250μA
Drain-source On Resistance-Max :
0.035Ohm
Gate Charge (Qg) (Max) @ Vgs :
59nC @ 10V
Qualification Status :
COMMERCIAL
JESD-30 Code :
R-PDSO-N8
Rds On (Max) @ Id, Vgs :
35m Ω @ 6.1A, 4.5V
Series :
PowerTrench®
Power Dissipation-Max :
1.9W Ta
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±8V
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
8-PowerWDFN
Drain Current-Max (Abs) (ID) :
0.0061A
JESD-609 Code :
e3
Transistor Application :
SWITCHING
Feedback Cap-Max (Crss) :
265 pF
Drain to Source Voltage (Vdss) :
20V
FET Type :
P-Channel
Time@Peak Reflow Temperature-Max (s) :
30
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Number of Terminations :
8
DS Breakdown Voltage-Min :
20V
Peak Reflow Temperature (Cel) :
260
Terminal Form :
NO LEAD
Reach Compliance Code :
Unknown
Drive Voltage (Max Rds On,Min Rds On) :
1.8V 4.5V
Current - Continuous Drain (Id) @ 25°C :
6.1A Ta
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
2.085pF @ 10V
Surface Mount :
yes
Pin Count :
8
Terminal Finish :
Tin
Terminal Position :
Dual
Pbfree Code :
yes
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMB668P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-PowerWDFN, Number of Terminations:8, Operating Temperature:-55°C~150°C TJ, FDMB668P pinout, FDMB668P datasheet PDF, FDMB668P amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMB668P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMB668P


P-Channel Tape & Reel (TR) 35m Ω @ 6.1A, 4.5V ±8V 2.085pF @ 10V 59nC @ 10V 20V 8-PowerWDFN

FDMB668P Overview


A device's maximal input capacitance is 2.085pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 0.0061A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

FDMB668P Features


a 20V drain to source voltage (Vdss)


FDMB668P Applications


There are a lot of Rochester Electronics, LLC
FDMB668P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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