FDMA6023PZT
- Mfr.Part #
- FDMA6023PZT
- Manufacturer
- onsemi
- Package / Case
- 6-UDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 3.6A 6MICROFET
- Stock
- 5,000
- In Stock :
- 5,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- FET Feature :
- Logic Level Gate
- Feedback Cap-Max (Crss) :
- 150 pF
- Number of Elements :
- 2
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 11ns
- Pbfree Code :
- yes
- Factory Lead Time :
- 16 Weeks
- REACH SVHC :
- No SVHC
- Power - Max :
- 700mW
- Fall Time (Typ) :
- 11 ns
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Max Power Dissipation :
- 1.4W
- Turn-Off Delay Time :
- 75 ns
- JESD-609 Code :
- e4
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Turn On Delay Time :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 885pF @ 10V
- Number of Pins :
- 6
- Lead Free :
- Lead Free
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Series :
- PowerTrench®
- Weight :
- 40mg
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 3.6A
- FET Type :
- 2 P-Channel (Dual)
- Mount :
- Surface Mount
- Power Dissipation :
- 1.4W
- Length :
- 2mm
- Threshold Voltage :
- -500mV
- Continuous Drain Current (ID) :
- -3.6A
- Transistor Element Material :
- SILICON
- Package / Case :
- 6-UDFN Exposed Pad
- Number of Terminations :
- 6
- Element Configuration :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Width :
- 2mm
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 20V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate to Source Voltage (Vgs) :
- 8V
- Height :
- 500μm
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- -500 mV
- Datasheets
- FDMA6023PZT

FDMA6023PZT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMA6023PZT Description
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications. It has two independent P-channel MOSFET with low on-resistance and minimum on-loss. When connected in a typical public power configuration, two-way current flow can be achieved. The MicroFET 2X2 ultra-thin package provides excellent thermal performance with its physical size, making it ideal for linear mode applications.
FDMA6023PZT Features
Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A
Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A
Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A
Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A
Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin
HBM ESD protection level > 2.4 kV typical (Note 3)
RoHS Compliant
Free from halogenated compounds and antimony oxides
FDMA6023PZT Applications
This product is general usage and suitable for many different applications.
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