FDMA3028N
- Mfr.Part #
- FDMA3028N
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 1,842
- In Stock :
- 1,842
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Series :
- PowerTrench®
- Element Configuration :
- Dual
- Power - Max :
- 700mW
- JESD-609 Code :
- e4
- Fall Time (Typ) :
- 2.5 ns
- Feedback Cap-Max (Crss) :
- 45 pF
- Max Power Dissipation :
- 1.5W
- Factory Lead Time :
- 16 Weeks
- Continuous Drain Current (ID) :
- 3.8A
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 68m Ω @ 3.8A, 4.5V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Length :
- 2mm
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Published :
- 2017
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 15 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2nC @ 5V
- Weight :
- 40mg
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 12V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 375pF @ 15V
- Package / Case :
- 6-VDFN Exposed Pad
- Width :
- 2mm
- Number of Pins :
- 6
- Number of Terminations :
- 6
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 1.5W
- FET Type :
- 2 N-Channel (Dual)
- Turn On Delay Time :
- 5.3 ns
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Radiation Hardening :
- No
- Rise Time :
- 3ns
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Logic Level Gate
- Height :
- 800μm
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 30V
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Datasheets
- FDMA3028N

FDMA3028N datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMA3028N Description
The device is a single package solution specially designed to meet the dual switching requirements of cellular phones and other ultra-portable applications. It has two independent N-channel MOSFET with low on-resistance and minimum on-loss. The MicroFET 2x2 package provides excellent thermal performance for its physical size and is ideal for linear mode applications.
FDMA3028N Features
Max. RDS(on) = 68 mΩ at VGS = 4.5 V, ID = 3.8 A
Max. RDS(on) = 88 mΩ at VGS = 2.5 V, ID = 3.4 A
Max. RDS(on) = 123 mΩ at VGS = 1.8 V, ID = 2.9 A
Low profile - 0. 8 mm maximum - in the new package
MicroFET 2x2 mm
RoHS Compliant
FDMA3028N Applications
linear mode applications
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