FDMA1029PZ
- Mfr.Part #
- FDMA1029PZ
- Manufacturer
- onsemi
- Package / Case
- 6-VDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 3.1A MICROFET
- Stock
- 21
- In Stock :
- 21
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Width :
- 2mm
- Number of Pins :
- 6
- Power - Max :
- 700mW
- Gate to Source Voltage (Vgs) :
- 12V
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 4.5V
- Pbfree Code :
- yes
- Power Dissipation :
- 1.4W
- Length :
- 2mm
- Threshold Voltage :
- 1V
- Contact Plating :
- Gold
- Number of Terminations :
- 6
- Turn-Off Delay Time :
- 37 ns
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 95m Ω @ 3.1A, 4.5V
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Number of Elements :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 540pF @ 10V
- Weight :
- 40mg
- Drain to Source Breakdown Voltage :
- -20V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e4
- FET Type :
- 2 P-Channel (Dual)
- Drain to Source Voltage (Vdss) :
- 20V
- Continuous Drain Current (ID) :
- 3.1A
- FET Feature :
- Logic Level Gate
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Current Rating :
- -3.1A
- Drain-source On Resistance-Max :
- 0.095Ohm
- Height :
- 750μm
- Element Configuration :
- Dual
- Turn On Delay Time :
- 13 ns
- Termination :
- SMD/SMT
- Max Power Dissipation :
- 1.4W
- Rise Time :
- 11ns
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 16 Weeks
- Voltage - Rated DC :
- -20V
- Fall Time (Typ) :
- 11 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- 6-VDFN Exposed Pad
- Dual Supply Voltage :
- -20V
- Transistor Element Material :
- SILICON
- Nominal Vgs :
- -1 V
- Datasheets
- FDMA1029PZ

FDMA1029PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDMA1029PZ Description
The device is a single package solution specifically designed for battery charging switches in cellular phones and other ultra-portable applications, with two independent P-channel MOSFET with low on-resistance, minimizing conduction loss. Two-way flow is possible.
The MicroFET 2x2 package provides excellent thermal performance for its physical size and is ideal for li n ear mode applications.
FDMA1029PZ Features
--3.1A-20V.Rps=95mΩ@Vas=-4.5V Rps(on)=141mΩ@VGs=-2.5V
Low profile-0.8 mm maximum-in the new package MicroFET2x2mm
HBM ESD protectionlevel>2.5kV(Note3)
RoHS Compliant
Free from halogenated compounds and antimony oxides
FDMA1029PZ Applications
li n ear mode applications
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