FDG6335N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

700mA

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Number of Terminations :

6

Pbfree Code :

yes

Power Dissipation :

300mW

Fall Time (Typ) :

7 ns

Rds On (Max) @ Id, Vgs :

300m Ω @ 700mA, 4.5V

Terminal Form :

Gull wing

Number of Pins :

6

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Voltage - Rated DC :

20V

Resistance :

300mOhm

Contact Plating :

Tin

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Series :

PowerTrench®

Height :

1.1mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Weight :

28mg

Current Rating :

700mA

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Turn On Delay Time :

5 ns

Transistor Element Material :

SILICON

Factory Lead Time :

10 Weeks

Number of Elements :

2

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Threshold Voltage :

1.1V

Input Capacitance (Ciss) (Max) @ Vds :

113pF @ 10V

Turn-Off Delay Time :

9 ns

Rise Time :

7ns

Width :

1.25mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Length :

2mm

Drain Current-Max (Abs) (ID) :

0.7A

Max Power Dissipation :

300mW