FDG6335N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current Rating :

700mA

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Threshold Voltage :

1.1V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Resistance :

300mOhm

Element Configuration :

Dual

Series :

PowerTrench®

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

20V

Max Junction Temperature (Tj) :

150°C

Number of Terminations :

6

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

12V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

5 ns

Power Dissipation :

300mW

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Packaging :

Tape and Reel (TR)

Rise Time :

7ns

Pbfree Code :

yes

Weight :

28mg

Turn-Off Delay Time :

9 ns

Mounting Type :

Surface Mount

Length :

2mm

Transistor Application :

SWITCHING

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Fall Time (Typ) :

7 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

10 Weeks

Contact Plating :

Tin

Height :

1.1mm

Mount :

Surface Mount

Max Power Dissipation :

300mW

Rds On (Max) @ Id, Vgs :

300m Ω @ 700mA, 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

JESD-609 Code :

e3

Width :

1.25mm

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Number of Elements :

2

Continuous Drain Current (ID) :

700mA

Input Capacitance (Ciss) (Max) @ Vds :

113pF @ 10V

Drain Current-Max (Abs) (ID) :

0.7A