FDG6303N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Dual Supply Voltage :

25V

Terminal Form :

Gull wing

Height :

1mm

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Turn On Delay Time :

3 ns

Termination :

SMD/SMT

Lead Free :

Lead Free

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

10 Weeks

REACH SVHC :

No SVHC

Rise Time :

8.5ns

Weight :

28mg

Power Dissipation :

300mW

Radiation Hardening :

No

Current Rating :

500mA

Length :

2mm

Number of Elements :

2

Fall Time (Typ) :

8.5 ns

Number of Pins :

6

Drain Current-Max (Abs) (ID) :

0.5A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Resistance :

450mOhm

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

8V

Transistor Application :

SWITCHING

Threshold Voltage :

800mV

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Drain to Source Breakdown Voltage :

25V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

17 ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Transistor Element Material :

SILICON

Nominal Vgs :

800 mV

Package / Case :

6-TSSOP, SC-88, SOT-363

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

500mA

FET Feature :

Logic Level Gate

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

25V

Number of Terminations :

6

Published :

1999

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Max Power Dissipation :

300mW

Width :

1.25mm