FDG6308P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Number of Terminations :

6

Input Capacitance (Ciss) (Max) @ Vds :

153pF @ 10V

Terminal Finish :

Tin (Sn)

FET Type :

2 P-Channel (Dual)

Power Dissipation :

300mW

Width :

1.25mm

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Mounting Type :

Surface Mount

Fall Time (Typ) :

15 ns

Turn-Off Delay Time :

7 ns

Number of Elements :

2

Drain to Source Breakdown Voltage :

-20V

Series :

PowerTrench®

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Current Rating :

-600mA

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Dual

Factory Lead Time :

10 Weeks

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Voltage - Rated DC :

-20V

Weight :

28mg

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Terminal Form :

Gull wing

Mount :

Surface Mount

Continuous Drain Current (ID) :

600mA

Turn On Delay Time :

5 ns

Max Power Dissipation :

300mW

Rds On (Max) @ Id, Vgs :

400m Ω @ 600mA, 4.5V

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Rise Time :

15ns

Operating Temperature :

-55°C~150°C TJ

Resistance :

400mOhm

Height :

1mm

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Length :

2mm

Transistor Application :

SWITCHING

Lead Free :

Lead Free

ECCN Code :

EAR99