FDG6308P

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Mfr.Part #
FDG6308P
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET 2P-CH 20V 600MA SC88
Stock
76,088
In Stock :
76,088

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Voltage - Rated DC :
-20V
Transistor Element Material :
SILICON
FET Type :
2 P-Channel (Dual)
Number of Terminations :
6
Height :
1mm
Operating Mode :
ENHANCEMENT MODE
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Number of Pins :
6
Continuous Drain Current (ID) :
600mA
Rise Time :
15ns
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Mount :
Surface Mount
Factory Lead Time :
10 Weeks
Fall Time (Typ) :
15 ns
Terminal Finish :
Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
2.5nC @ 4.5V
Packaging :
Tape and Reel (TR)
Package / Case :
6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Rds On (Max) @ Id, Vgs :
400m Ω @ 600mA, 4.5V
Number of Elements :
2
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
153pF @ 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
PowerTrench®
Element Configuration :
Dual
Turn-Off Delay Time :
7 ns
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
Pbfree Code :
yes
Max Power Dissipation :
300mW
Width :
1.25mm
FET Feature :
Logic Level Gate
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Weight :
28mg
Current Rating :
-600mA
Length :
2mm
Turn On Delay Time :
5 ns
Lead Free :
Lead Free
Transistor Application :
SWITCHING
Radiation Hardening :
No
Drain to Source Voltage (Vdss) :
20V
Resistance :
400mOhm
Drain to Source Breakdown Voltage :
-20V
Power Dissipation :
300mW
Gate to Source Voltage (Vgs) :
8V
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDG6308P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:6, Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Package / Case:6-TSSOP, SC-88, SOT-363, Mounting Type:Surface Mount, FDG6308P pinout, FDG6308P datasheet PDF, FDG6308P amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDG6308P ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDG6308P


FDG6308P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDG6308P  Description

 

  This P-channel 1.8V dedicated MOSFET uses advanced low-voltage power trench technology. It has been optimized for battery power management applications.

 

FDG6308P    Features

 

–0.6 A, –20 V.

RDS(ON)= 0.40Ω @ VGS = –4.5 V

RDS(ON) = 0.55Ω @ VGS = –2.5 V

RDS(ON) = 0.80Ω @ VGS = –1.8 V

Low gate charge

High performance trench technology for extremelylow RDS(ON)

Compact industry standard SC70-6 surface mountpackage


FDG6308P     Applications


This product is general usage and suitable for many different applications.

 





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