FDG6308P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

300mW

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

FET Type :

2 P-Channel (Dual)

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

15 ns

Package / Case :

6-TSSOP, SC-88, SOT-363

Continuous Drain Current (ID) :

600mA

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Rated DC :

-20V

Power Dissipation :

300mW

Lead Free :

Lead Free

Height :

1mm

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-600mA

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

400m Ω @ 600mA, 4.5V

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn On Delay Time :

5 ns

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

153pF @ 10V

Turn-Off Delay Time :

7 ns

Element Configuration :

Dual

Pbfree Code :

yes

Factory Lead Time :

10 Weeks

Width :

1.25mm

Mounting Type :

Surface Mount

Length :

2mm

Drain to Source Breakdown Voltage :

-20V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

20V

Weight :

28mg

Radiation Hardening :

No

Resistance :

400mOhm

Rise Time :

15ns

Number of Elements :

2