FDG6308P
- Mfr.Part #
- FDG6308P
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET 2P-CH 20V 600MA SC88
- Stock
- 76,088
- In Stock :
- 76,088
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Max Power Dissipation :
- 300mW
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 6
- FET Type :
- 2 P-Channel (Dual)
- Gate to Source Voltage (Vgs) :
- 8V
- Fall Time (Typ) :
- 15 ns
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Continuous Drain Current (ID) :
- 600mA
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Voltage - Rated DC :
- -20V
- Power Dissipation :
- 300mW
- Lead Free :
- Lead Free
- Height :
- 1mm
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- -600mA
- Number of Terminations :
- 6
- Packaging :
- Tape and Reel (TR)
- Series :
- PowerTrench®
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 600mA, 4.5V
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Turn On Delay Time :
- 5 ns
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 153pF @ 10V
- Turn-Off Delay Time :
- 7 ns
- Element Configuration :
- Dual
- Pbfree Code :
- yes
- Factory Lead Time :
- 10 Weeks
- Width :
- 1.25mm
- Mounting Type :
- Surface Mount
- Length :
- 2mm
- Drain to Source Breakdown Voltage :
- -20V
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- FET Feature :
- Logic Level Gate
- Drain to Source Voltage (Vdss) :
- 20V
- Weight :
- 28mg
- Radiation Hardening :
- No
- Resistance :
- 400mOhm
- Rise Time :
- 15ns
- Number of Elements :
- 2
- Datasheets
- FDG6308P
FDG6308P Documents

FDG6308P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDG6308P Description
This P-channel 1.8V dedicated MOSFET uses advanced low-voltage power trench technology. It has been optimized for battery power management applications.
FDG6308P Features
–0.6 A, –20 V.
RDS(ON)= 0.40Ω @ VGS = –4.5 V
RDS(ON) = 0.55Ω @ VGS = –2.5 V
RDS(ON) = 0.80Ω @ VGS = –1.8 V
Low gate charge
High performance trench technology for extremelylow RDS(ON)
Compact industry standard SC70-6 surface mountpackage
FDG6308P Applications
This product is general usage and suitable for many different applications.
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