FDG6301N-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5 ns

Continuous Drain Current (ID) :

220mA

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

25V

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Element Configuration :

Dual

Fall Time (Typ) :

3.2 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Height :

1.1mm

Transistor Element Material :

SILICON

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Max Junction Temperature (Tj) :

150°C

Number of Elements :

2

Rise Time :

4.5ns

Series :

Automotive, AEC-Q101

Number of Pins :

6

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

4Ohm

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

25V

Threshold Voltage :

850mV

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

4 ns

Max Power Dissipation :

300mW

Factory Lead Time :

42 Weeks

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

300mW

Weight :

28mg