FDG6304P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

-410mA

Published :

1999

Factory Lead Time :

10 Weeks

REACH SVHC :

No SVHC

Resistance :

1.1Ohm

Drain to Source Voltage (Vdss) :

25V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

300mW

ECCN Code :

EAR99

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

62pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

-8V

Contact Plating :

Tin

Radiation Hardening :

No

Element Configuration :

Dual

Current Rating :

-410mA

RoHS Status :

ROHS3 Compliant

Rise Time :

8ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Dual Supply Voltage :

-25V

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

300mW

Threshold Voltage :

-820mV

Pbfree Code :

yes

Number of Terminations :

6

Transistor Application :

SWITCHING

Voltage - Rated DC :

-25V

Drain Current-Max (Abs) (ID) :

0.41A

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Mount :

Surface Mount

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

410mA

Weight :

28mg

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 410mA, 4.5V

FET Type :

2 P-Channel (Dual)

Turn On Delay Time :

7 ns

Drain to Source Breakdown Voltage :

-25V

Turn-Off Delay Time :

55 ns

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Package / Case :

6-TSSOP, SC-88, SOT-363

Nominal Vgs :

-820 mV

FET Feature :

Logic Level Gate

Fall Time (Typ) :

8 ns