FDG6306P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

420m Ω @ 600mA, 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Rise Time :

14ns

Contact Plating :

Tin

Turn-Off Delay Time :

6 ns

Number of Terminations :

6

Transistor Element Material :

SILICON

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Junction Temperature (Tj) :

150°C

Power Dissipation :

300mW

Threshold Voltage :

-1.2V

RoHS Status :

ROHS3 Compliant

Published :

2001

Width :

1.25mm

Element Configuration :

Dual

ECCN Code :

EAR99

Pbfree Code :

yes

Voltage - Rated DC :

-20V

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Current Rating :

-600mA

Max Power Dissipation :

300mW

Weight :

28mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2mm

Number of Elements :

2

Package / Case :

6-TSSOP, SC-88, SOT-363

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

114pF @ 10V

FET Type :

2 P-Channel (Dual)

Turn On Delay Time :

5.5 ns

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

12V

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Radiation Hardening :

No

REACH SVHC :

No SVHC

Fall Time (Typ) :

14 ns

Series :

PowerTrench®

Height :

1.1mm

Drain to Source Breakdown Voltage :

-20V

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Mount :

Surface Mount

Number of Pins :

6

Continuous Drain Current (ID) :

600mA

Terminal Form :

Gull wing