FDG6301N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Continuous Drain Current (ID) :

220mA

Threshold Voltage :

850mV

Radiation Hardening :

No

Height :

1.1mm

Mounting Type :

Surface Mount

Voltage - Rated DC :

25V

Termination :

SMD/SMT

Mount :

Surface Mount

FET Type :

2 N-Channel (Dual)

Weight :

28mg

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

4.5 ns

Published :

1999

Transistor Element Material :

SILICON

Max Power Dissipation :

300mW

Turn On Delay Time :

5 ns

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Dual Supply Voltage :

25V

Package / Case :

6-TSSOP, SC-88, SOT-363

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Number of Terminations :

6

Current Rating :

220mA

Element Configuration :

Dual

Width :

1.25mm

Number of Pins :

6

Length :

2mm

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Max Junction Temperature (Tj) :

150°C

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Rise Time :

4.5ns

Lead Free :

Lead Free

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

Packaging :

Tape and Reel (TR)

Factory Lead Time :

10 Weeks

Drain to Source Breakdown Voltage :

25V

Turn-Off Delay Time :

4 ns

Pbfree Code :

yes

Power Dissipation :

300mW

Resistance :

4Ohm