FDG6301N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Dual Supply Voltage :

25V

Fall Time (Typ) :

4.5 ns

Power Dissipation :

300mW

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Number of Terminations :

6

Current Rating :

220mA

FET Feature :

Logic Level Gate

Length :

2mm

Transistor Element Material :

SILICON

Contact Plating :

Tin

Element Configuration :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Max Junction Temperature (Tj) :

150°C

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

25V

Resistance :

4Ohm

Pbfree Code :

yes

Mount :

Surface Mount

REACH SVHC :

No SVHC

Threshold Voltage :

850mV

Drain to Source Breakdown Voltage :

25V

Width :

1.25mm

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

Terminal Form :

Gull wing

ECCN Code :

EAR99

Max Power Dissipation :

300mW

Rise Time :

4.5ns

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Number of Pins :

6

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

220mA

Number of Elements :

2

Lead Free :

Lead Free

Package / Case :

6-TSSOP, SC-88, SOT-363

Height :

1.1mm

Turn-Off Delay Time :

4 ns

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Published :

1999

Gate to Source Voltage (Vgs) :

8V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Weight :

28mg

Radiation Hardening :

No

Turn On Delay Time :

5 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Factory Lead Time :

10 Weeks