FDG6332C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

Published :

2017

Operating Mode :

ENHANCEMENT MODE

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistance :

300mOhm

REACH SVHC :

No SVHC

Max Power Dissipation :

300mW

Current Rating :

700mA

FET Feature :

Logic Level Gate

Number of Pins :

6

Turn-Off Delay Time :

6 ns

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Threshold Voltage :

1.1V

Lead Free :

Lead Free

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

Fall Time (Typ) :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

113pF @ 10V

Continuous Drain Current (ID) :

700mA

Power Dissipation :

300mW

Rds On (Max) @ Id, Vgs :

300m Ω @ 700mA, 4.5V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Length :

2mm

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Height :

1.1mm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Voltage :

20V

RoHS Status :

ROHS3 Compliant

Rise Time :

14ns

Series :

PowerTrench®

Pbfree Code :

yes

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

12V

Width :

1.25mm

Current :

7A

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

700mA 600mA

Drain to Source Breakdown Voltage :

20V

Contact Plating :

Tin

Element Configuration :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

FET Type :

N and P-Channel

JESD-609 Code :

e3