FDG6332C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Contact Plating :

Tin

Lead Free :

Lead Free

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Published :

2017

Threshold Voltage :

1.1V

FET Type :

N and P-Channel

Series :

PowerTrench®

Pbfree Code :

yes

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

700mA 600mA

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Number of Pins :

6

Width :

1.25mm

Rds On (Max) @ Id, Vgs :

300m Ω @ 700mA, 4.5V

Voltage :

20V

Input Capacitance (Ciss) (Max) @ Vds :

113pF @ 10V

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Max Power Dissipation :

300mW

Factory Lead Time :

10 Weeks

Current :

7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

700mA

RoHS Status :

ROHS3 Compliant

Current Rating :

700mA

Height :

1.1mm

Package / Case :

6-TSSOP, SC-88, SOT-363

Length :

2mm

ECCN Code :

EAR99

Number of Terminations :

6

Transistor Element Material :

SILICON

Turn-Off Delay Time :

6 ns

Element Configuration :

Dual

Resistance :

300mOhm

Transistor Application :

SWITCHING

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Fall Time (Typ) :

14 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

300mW

Rise Time :

14ns

Max Junction Temperature (Tj) :

150°C

Operating Mode :

ENHANCEMENT MODE