FDG6322C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

Element Configuration :

Dual

Max Power Dissipation :

300mW

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Pins :

6

Published :

2017

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

220mA

Factory Lead Time :

10 Weeks

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Resistance :

4Ohm

Package / Case :

6-TSSOP, SC-88, SOT-363

Power Dissipation :

300mW

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Fall Time (Typ) :

8 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Turn-Off Delay Time :

55 ns

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Length :

2mm

Weight :

28mg

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

8V

Current - Continuous Drain (Id) @ 25°C :

220mA 410mA

Rise Time :

8ns

Nominal Vgs :

850 mV

FET Feature :

Logic Level Gate

Number of Terminations :

6

Number of Elements :

2

Height :

1mm

FET Type :

N and P-Channel

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Threshold Voltage :

850mV

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Width :

1.25mm

Current Rating :

220mA

Drain to Source Breakdown Voltage :

25V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99