FDG6321C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

8 ns

Contact Plating :

Tin

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

300mW

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rise Time :

8ns

Number of Elements :

2

Lead Free :

Lead Free

Turn-Off Delay Time :

55 ns

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

FET Type :

N and P-Channel

Weight :

28mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

500mA 410mA

Terminal Form :

Gull wing

Published :

2017

ECCN Code :

EAR99

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Threshold Voltage :

800mV

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Junction Temperature (Tj) :

150°C

Resistance :

450mOhm

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.5A

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Max Power Dissipation :

300mW

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Factory Lead Time :

10 Weeks

Height :

1.1mm

Number of Pins :

6

Current Rating :

500mA

JESD-609 Code :

e3

Continuous Drain Current (ID) :

500mA

REACH SVHC :

No SVHC

FET Feature :

Logic Level Gate