FDG6320C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Dual Supply Voltage :

25V

Resistance :

4Ohm

Turn On Delay Time :

5 ns

Termination :

SMD/SMT

Transistor Application :

SWITCHING

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

REACH SVHC :

No SVHC

Factory Lead Time :

10 Weeks

Threshold Voltage :

850mV

Current - Continuous Drain (Id) @ 25°C :

220mA 140mA

FET Type :

N and P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Gate to Source Voltage (Vgs) :

8V

FET Feature :

Logic Level Gate

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Fall Time (Typ) :

8 ns

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

Mount :

Surface Mount

Rise Time :

8ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

ECCN Code :

EAR99

Terminal Form :

Gull wing

Current Rating :

220mA

Contact Plating :

Tin

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Width :

1.25mm

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Length :

2mm

Height :

1.1mm

Number of Pins :

6

Published :

2017

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Max Power Dissipation :

300mW

Turn-Off Delay Time :

9 ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

300mW

Weight :

28mg

Continuous Drain Current (ID) :

220mA