FDG6320C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Contact Plating :

Tin

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

25V

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

Width :

1.25mm

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

25V

Resistance :

4Ohm

Terminal Form :

Gull wing

Published :

2017

Weight :

28mg

Turn-Off Delay Time :

9 ns

Continuous Drain Current (ID) :

220mA

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Rise Time :

8ns

Factory Lead Time :

10 Weeks

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

4 Ω @ 220mA, 4.5V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

220mA 140mA

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

8V

FET Type :

N and P-Channel

REACH SVHC :

No SVHC

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Element Material :

SILICON

Power Dissipation :

300mW

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Length :

2mm

ECCN Code :

EAR99

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Max Junction Temperature (Tj) :

150°C

Element Configuration :

Dual

Mounting Type :

Surface Mount

Additional Feature :

LOGIC LEVEL COMPATIBLE

Current Rating :

220mA

Turn On Delay Time :

5 ns

Max Power Dissipation :

300mW

Threshold Voltage :

850mV

Package / Case :

6-TSSOP, SC-88, SOT-363

Number of Terminations :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Height :

1.1mm