FDG6317NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Power Dissipation :

300mW

Operating Temperature :

-55°C~150°C TJ

Weight :

28mg

Mount :

Surface Mount

REACH SVHC :

No SVHC

Height :

1.1mm

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

20V

Turn-Off Delay Time :

7.5 ns

Continuous Drain Current (ID) :

700mA

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

66.5pF @ 10V

Number of Terminations :

6

Published :

2017

Resistance :

560mOhm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

10 Weeks

Rise Time :

7ns

ECCN Code :

EAR99

Number of Pins :

6

Threshold Voltage :

1.2V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Turn On Delay Time :

5.5 ns

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.7A

Package / Case :

6-TSSOP, SC-88, SOT-363

Series :

PowerTrench®

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

2.5 ns

Lead Free :

Lead Free

Number of Elements :

2

Max Junction Temperature (Tj) :

150°C

Width :

1.25mm

Radiation Hardening :

No

Length :

2mm

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Current Rating :

700mA

Max Power Dissipation :

300mW

Gate Charge (Qg) (Max) @ Vgs :

1.1nC @ 4.5V

Rds On (Max) @ Id, Vgs :

400m Ω @ 700mA, 4.5V

Gate to Source Voltage (Vgs) :

12V

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.5V @ 250µA