FDG6316P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

12V

Input Capacitance (Ciss) (Max) @ Vds :

146pF @ 6V

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Power Dissipation :

300mW

Radiation Hardening :

No

Turn-Off Delay Time :

8 ns

FET Feature :

Logic Level Gate

Number of Elements :

2

Mounting Type :

Surface Mount

Resistance :

270mOhm

Rds On (Max) @ Id, Vgs :

270m Ω @ 700mA, 4.5V

Fall Time (Typ) :

13 ns

Pbfree Code :

yes

Number of Terminations :

6

Continuous Drain Current (ID) :

-700mA

Mount :

Surface Mount

FET Type :

2 P-Channel (Dual)

Length :

2mm

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Published :

2001

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

-600mV

Number of Pins :

6

Rise Time :

13ns

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-12V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

-12V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

10 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Width :

1.25mm

Turn On Delay Time :

5 ns

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Max Power Dissipation :

300mW

Weight :

28mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

Gate to Source Voltage (Vgs) :

8V

Height :

1.1mm

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Current Rating :

-700mA

Current - Continuous Drain (Id) @ 25°C :

700mA

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.7A

Element Configuration :

Dual