FDG6313N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

25V

Power - Max :

300mW

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

300mW

Published :

2002

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Current Rating :

500mA

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Element Configuration :

Dual

Current - Continuous Drain (Id) @ 25°C :

500mA

RoHS Status :

RoHS Compliant

Package / Case :

6-TSSOP, SC-88, SOT-363

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

450mOhm @ 500mA, 4.5V

Rds On Max :

450 mΩ

Rise Time :

8.5ns

Supplier Device Package :

SC-88 (SC-70-6)

Continuous Drain Current (ID) :

500mA

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Input Capacitance :

50pF

Number of Elements :

2

Max Operating Temperature :

150°C

Fall Time (Typ) :

8.5 ns

Min Operating Temperature :

-55°C

Number of Pins :

6

Turn-Off Delay Time :

17 ns

Drain to Source Resistance :

340mOhm

Voltage - Rated DC :

25V

Gate to Source Voltage (Vgs) :

8V