FDD6796A
- Mfr.Part #
- FDD6796A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 20A/40A TO252
- Stock
- 3,380
- In Stock :
- 3,380
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 67A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain-source On Resistance-Max :
- 0.0057Ohm
- Number of Elements :
- 1
- Rise Time :
- 7ns
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 8 ns
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 4 ns
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 40A Tc
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Power Dissipation :
- 3.7W
- Continuous Drain Current (ID) :
- 20A
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 20A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1780pF @ 13V
- Avalanche Energy Rating (Eas) :
- 40 mJ
- Turn-Off Delay Time :
- 19 ns
- Power Dissipation-Max :
- 3.7W Ta 42W Tc
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain to Source Breakdown Voltage :
- 25V
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Datasheets
- FDD6796A

N-Channel Tape & Reel (TR) 5.7m Ω @ 20A, 10V ±20V 1780pF @ 13V 34nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6796A Description
With either synchronous or traditional switching FWM controllers, this N-Channel MOSFET has been specifically created to increase the overall efficiency of DC/DC converters. Low gate charge, low gs(on), and quick switching speed have all been optimized for. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.
FDD6796A Features
-
Max ())=5.7 mQ at lD = 20 A and VGS = 10 V.
-
Max rQS(on) is 15.0 mQ at 4.5 V and ID is 15.2 A.
-
UlL testing is complete.
-
RoHS Compliant.
FDD6796A Applications
-
Vcore DC-DC for Servers and Desktop Computers
-
Intermediate Bus Architecture with VRM
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