FDD6606

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

PowerTrench®

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

240 mJ

Drain Current-Max (Abs) (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2.4pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

75A Ta

Power Dissipation-Max :

71W Tc

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

Unknown

Pbfree Code :

yes

Number of Elements :

1

Qualification Status :

COMMERCIAL

Pin Count :

3

Rds On (Max) @ Id, Vgs :

6m Ω @ 17A, 10V

DS Breakdown Voltage-Min :

30V

Pulsed Drain Current-Max (IDM) :

100A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.006Ohm

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)