FDD6530A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

2.39mm

Power Dissipation-Max :

3.3W Ta 33W Tc

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 10V

Rise Time :

7ns

Factory Lead Time :

10 Weeks

Power Dissipation :

33W

Transistor Application :

SWITCHING

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Avalanche Energy Rating (Eas) :

55 mJ

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Lead Free :

Lead Free

Published :

2017

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

Current Rating :

21A

Terminal Form :

Gull wing

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

32m Ω @ 8A, 4.5V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

ECCN Code :

EAR99

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

JESD-609 Code :

e3

Continuous Drain Current (ID) :

21A

Length :

6.73mm

Case Connection :

DRAIN

Width :

6.22mm

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

20V

Number of Pins :

3

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

4 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Radiation Hardening :

No

Turn On Delay Time :

8 ns

Turn-Off Delay Time :

18 ns

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Weight :

260.37mg

Voltage - Rated DC :

20V