FDD6606
- Mfr.Part #
- FDD6606
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 75A DPAK
- Stock
- 2,265
- In Stock :
- 2,265
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 5V
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.4pF @ 15V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 2
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 75A
- Terminal Form :
- Gull wing
- Pulsed Drain Current-Max (IDM) :
- 100A
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 75A Ta
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 17A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.006Ohm
- Qualification Status :
- COMMERCIAL
- Terminal Finish :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Reach Compliance Code :
- Unknown
- Drain to Source Voltage (Vdss) :
- 30V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- DS Breakdown Voltage-Min :
- 30V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 71W Tc
- Series :
- PowerTrench®
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- FDD6606

N-Channel Tape & Reel (TR) 6m Ω @ 17A, 10V ±20V 2.4pF @ 15V 31nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD6606 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 240 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2.4pF @ 15V.The drain current is the maximum continuous current this device can conduct, which is 75A.Pulsed drain current is maximum rated peak drain current 100A.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
FDD6606 Features
the avalanche energy rating (Eas) is 240 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
FDD6606 Applications
There are a lot of Rochester Electronics, LLC
FDD6606 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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