FDD6630A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

8ns

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Power Dissipation-Max :

28W Ta

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V

Pbfree Code :

yes

Number of Elements :

1

Element Configuration :

Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 5V

Factory Lead Time :

10 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

3V @ 250µA

Rds On (Max) @ Id, Vgs :

35m Ω @ 7.6A, 10V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Length :

6.73mm

ECCN Code :

EAR99

Terminal Form :

Gull wing

Fall Time (Typ) :

13 ns

Voltage - Rated DC :

30V

Avalanche Energy Rating (Eas) :

55 mJ

Width :

6.22mm

Current Rating :

21A

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Published :

2001

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

28W

Weight :

260.37mg

Radiation Hardening :

No

Turn-Off Delay Time :

17 ns

Mount :

Surface Mount

Resistance :

35mOhm

Turn On Delay Time :

5 ns

Height :

2.39mm

JESD-30 Code :

R-PSSO-G2

Series :

PowerTrench®

Continuous Drain Current (ID) :

21A

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Input Capacitance (Ciss) (Max) @ Vds :

462pF @ 15V

Nominal Vgs :

1.7 V