FDD6630A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 15 hours ago)

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Turn-Off Delay Time :

17 ns

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

55 mJ

Transistor Element Material :

SILICON

Width :

6.22mm

JESD-609 Code :

e3

Element Configuration :

Single

Continuous Drain Current (ID) :

21A

Input Capacitance (Ciss) (Max) @ Vds :

462pF @ 15V

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

30V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

10 Weeks

Length :

6.73mm

Resistance :

35mOhm

Power Dissipation :

28W

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

35m Ω @ 7.6A, 10V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Weight :

260.37mg

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Published :

2001

Number of Pins :

3

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Current Rating :

21A

Height :

2.39mm

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

5 ns

Nominal Vgs :

1.7 V

Drain to Source Breakdown Voltage :

30V

Rise Time :

8ns

Number of Terminations :

2

Fall Time (Typ) :

13 ns

Power Dissipation-Max :

28W Ta