FDD6030L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Power Dissipation :

3.2W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Fall Time (Typ) :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 5V

Drain to Source Breakdown Voltage :

30V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1230pF @ 15V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Rise Time :

7ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

260.37mg

Continuous Drain Current (ID) :

50A

Element Configuration :

Single

Terminal Form :

Gull wing

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 12A, 10V

Power Dissipation-Max :

3.2W Ta 56W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Series :

PowerTrench®

Turn-Off Delay Time :

29 ns

Turn On Delay Time :

10 ns

Current - Continuous Drain (Id) @ 25°C :

12A Ta 50A Tc

Pbfree Code :

yes

Case Connection :

DRAIN