FDAF75N28

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Mfr.Part #
FDAF75N28
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 280V 46A TO3PF
Stock
1,291
In Stock :
1,291

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
Not Applicable
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
41m Ω @ 23A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
6.7pF @ 25V
Mounting Type :
Through Hole
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
280V
Power Dissipation-Max :
215W Tc
JESD-609 Code :
e3
Avalanche Energy Rating (Eas) :
3080 mJ
Transistor Element Material :
SILICON
JESD-30 Code :
R-XSFM-T3
Vgs(th) (Max) @ Id :
5V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.041Ohm
Terminal Finish :
MATTE TIN
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-3P-3 Full Pack
Additional Feature :
FAST SWITCHING
Pin Count :
3
Drain Current-Max (Abs) (ID) :
46A
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
144nC @ 10V
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
280V
FET Type :
N-Channel
Qualification Status :
COMMERCIAL
Surface Mount :
No
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM) :
184A
Series :
UniFET™
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
46A Tc
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDAF75N28 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-3P-3 Full Pack, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, FDAF75N28 pinout, FDAF75N28 datasheet PDF, FDAF75N28 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDAF75N28 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDAF75N28


N-Channel Tube 41m Ω @ 23A, 10V ±30V 6.7pF @ 25V 144nC @ 10V 280V TO-3P-3 Full Pack

FDAF75N28 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3080 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6.7pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 46A.There is a peak drain current of 184A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 280V, it should remain above the 280V level.The transistor must receive a 280V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

FDAF75N28 Features


the avalanche energy rating (Eas) is 3080 mJ
based on its rated peak drain current 184A.
a 280V drain to source voltage (Vdss)


FDAF75N28 Applications


There are a lot of Rochester Electronics, LLC
FDAF75N28 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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