FDAF69N25
- Mfr.Part #
- FDAF69N25
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 34A TO3PF
- Stock
- 1,930
- In Stock :
- 1,930
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- MATTE TIN
- Vgs (Max) :
- ±30V
- Pin Count :
- 3
- Surface Mount :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.64pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 250V
- Series :
- UniFET™
- Drain-source On Resistance-Max :
- 0.041Ohm
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-3P-3 Full Pack
- Avalanche Energy Rating (Eas) :
- 1894 mJ
- Number of Elements :
- 1
- Additional Feature :
- FAST SWITCHING
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 136A
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Pbfree Code :
- yes
- Qualification Status :
- COMMERCIAL
- Drain to Source Voltage (Vdss) :
- 250V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 17A, 10V
- Peak Reflow Temperature (Cel) :
- Not Applicable
- RoHS Status :
- ROHS3 Compliant
- Drain Current-Max (Abs) (ID) :
- 34A
- Power Dissipation-Max :
- 115W Tc
- Packaging :
- Tube
- Datasheets
- FDAF69N25

N-Channel Tube 41m Ω @ 17A, 10V ±30V 4.64pF @ 25V 100nC @ 10V 250V TO-3P-3 Full Pack
FDAF69N25 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1894 mJ.A device's maximal input capacitance is 4.64pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 34A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 136A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FDAF69N25 Features
the avalanche energy rating (Eas) is 1894 mJ
based on its rated peak drain current 136A.
a 250V drain to source voltage (Vdss)
FDAF69N25 Applications
There are a lot of Rochester Electronics, LLC
FDAF69N25 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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