FDAF69N25

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Mfr.Part #
FDAF69N25
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 250V 34A TO3PF
Stock
1,930
In Stock :
1,930

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
MATTE TIN
Vgs (Max) :
±30V
Pin Count :
3
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
4.64pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Vgs(th) (Max) @ Id :
5V @ 250μA
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
DS Breakdown Voltage-Min :
250V
Series :
UniFET™
Drain-source On Resistance-Max :
0.041Ohm
JESD-30 Code :
R-PSFM-T3
Package / Case :
TO-3P-3 Full Pack
Avalanche Energy Rating (Eas) :
1894 mJ
Number of Elements :
1
Additional Feature :
FAST SWITCHING
FET Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
136A
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
3
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Pbfree Code :
yes
Qualification Status :
COMMERCIAL
Drain to Source Voltage (Vdss) :
250V
Mounting Type :
Through Hole
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
41m Ω @ 17A, 10V
Peak Reflow Temperature (Cel) :
Not Applicable
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
34A
Power Dissipation-Max :
115W Tc
Packaging :
Tube
Datasheets
FDAF69N25
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDAF69N25 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-3P-3 Full Pack, Number of Terminations:3, Mounting Type:Through Hole, FDAF69N25 pinout, FDAF69N25 datasheet PDF, FDAF69N25 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDAF69N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDAF69N25


N-Channel Tube 41m Ω @ 17A, 10V ±30V 4.64pF @ 25V 100nC @ 10V 250V TO-3P-3 Full Pack

FDAF69N25 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1894 mJ.A device's maximal input capacitance is 4.64pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 34A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 136A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FDAF69N25 Features


the avalanche energy rating (Eas) is 1894 mJ
based on its rated peak drain current 136A.
a 250V drain to source voltage (Vdss)


FDAF69N25 Applications


There are a lot of Rochester Electronics, LLC
FDAF69N25 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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