FDAF75N28
- Mfr.Part #
- FDAF75N28
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 280V 46A TO3PF
- Stock
- 1,291
- In Stock :
- 1,291
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 280V
- Pbfree Code :
- yes
- Series :
- UniFET™
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 46A
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 23A, 10V
- FET Type :
- N-Channel
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Package / Case :
- TO-3P-3 Full Pack
- Pulsed Drain Current-Max (IDM) :
- 184A
- Gate Charge (Qg) (Max) @ Vgs :
- 144nC @ 10V
- Drain-source On Resistance-Max :
- 0.041Ohm
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- DS Breakdown Voltage-Min :
- 280V
- Additional Feature :
- FAST SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 6.7pF @ 25V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- JESD-30 Code :
- R-XSFM-T3
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Through Hole
- Power Dissipation-Max :
- 215W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Terminal Finish :
- MATTE TIN
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 3080 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Qualification Status :
- COMMERCIAL
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FDAF75N28

N-Channel Tube 41m Ω @ 23A, 10V ±30V 6.7pF @ 25V 144nC @ 10V 280V TO-3P-3 Full Pack
FDAF75N28 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3080 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6.7pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 46A.There is a peak drain current of 184A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 280V, it should remain above the 280V level.The transistor must receive a 280V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
FDAF75N28 Features
the avalanche energy rating (Eas) is 3080 mJ
based on its rated peak drain current 184A.
a 280V drain to source voltage (Vdss)
FDAF75N28 Applications
There are a lot of Rochester Electronics, LLC
FDAF75N28 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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