FDAF75N28

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Mfr.Part #
FDAF75N28
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 280V 46A TO3PF
Stock
1,291
In Stock :
1,291

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
280V
Pbfree Code :
yes
Series :
UniFET™
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
46A
Rds On (Max) @ Id, Vgs :
41m Ω @ 23A, 10V
FET Type :
N-Channel
Surface Mount :
No
Vgs(th) (Max) @ Id :
5V @ 250μA
Package / Case :
TO-3P-3 Full Pack
Pulsed Drain Current-Max (IDM) :
184A
Gate Charge (Qg) (Max) @ Vgs :
144nC @ 10V
Drain-source On Resistance-Max :
0.041Ohm
Terminal Position :
Single
JESD-609 Code :
e3
DS Breakdown Voltage-Min :
280V
Additional Feature :
FAST SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
6.7pF @ 25V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
JESD-30 Code :
R-XSFM-T3
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Power Dissipation-Max :
215W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Finish :
MATTE TIN
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
3080 mJ
Current - Continuous Drain (Id) @ 25°C :
46A Tc
Packaging :
Tube
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
Not Applicable
Qualification Status :
COMMERCIAL
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
FDAF75N28
Introducing Transistors - FETs, MOSFETs - Single onsemi FDAF75N28 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3 Full Pack, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, FDAF75N28 pinout, FDAF75N28 datasheet PDF, FDAF75N28 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDAF75N28 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDAF75N28


N-Channel Tube 41m Ω @ 23A, 10V ±30V 6.7pF @ 25V 144nC @ 10V 280V TO-3P-3 Full Pack

FDAF75N28 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3080 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6.7pF @ 25V.There is no drain current on this device since the maximum continuous current it can conduct is 46A.There is a peak drain current of 184A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 280V, it should remain above the 280V level.The transistor must receive a 280V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

FDAF75N28 Features


the avalanche energy rating (Eas) is 3080 mJ
based on its rated peak drain current 184A.
a 280V drain to source voltage (Vdss)


FDAF75N28 Applications


There are a lot of Rochester Electronics, LLC
FDAF75N28 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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