FDAF59N30

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

34A

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

300V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

DS Breakdown Voltage-Min :

300V

Package / Case :

TO-3P-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Number of Elements :

1

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Drain-source On Resistance-Max :

0.056Ohm

Number of Terminations :

3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

56m Ω @ 17A, 10V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

161W Tc

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

4.67pF @ 25V

JESD-30 Code :

R-XSFM-T3

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Avalanche Energy Rating (Eas) :

1734 mJ

Peak Reflow Temperature (Cel) :

Not Applicable

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

UniFET™

Pbfree Code :

yes

Additional Feature :

FAST SWITCHING

Pin Count :

3

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

136A