FDAF59N30

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Mfr.Part #
FDAF59N30
Manufacturer
Fairchild Semiconductor
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 300V 34A TO3PF
Stock
6,165
In Stock :
6,165

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
Not Applicable
Additional Feature :
FAST SWITCHING
Series :
UniFET™
Avalanche Energy Rating (Eas) :
1734 mJ
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Reach Compliance Code :
Unknown
Input Capacitance (Ciss) (Max) @ Vds :
4.67pF @ 25V
DS Breakdown Voltage-Min :
300V
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
56m Ω @ 17A, 10V
Pin Count :
3
Drain Current-Max (Abs) (ID) :
34A
Package / Case :
TO-3P-3 Full Pack
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-XSFM-T3
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain-source On Resistance-Max :
0.056Ohm
Pbfree Code :
yes
Qualification Status :
COMMERCIAL
Surface Mount :
No
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
300V
Pulsed Drain Current-Max (IDM) :
136A
Vgs (Max) :
±30V
Power Dissipation-Max :
161W Tc
Terminal Finish :
MATTE TIN
Datasheets
FDAF59N30
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDAF59N30 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3 Full Pack, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, FDAF59N30 pinout, FDAF59N30 datasheet PDF, FDAF59N30 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDAF59N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDAF59N30


N-Channel Tube 56m Ω @ 17A, 10V ±30V 4.67pF @ 25V 100nC @ 10V 300V TO-3P-3 Full Pack

FDAF59N30 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1734 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4.67pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 34A.Peak drain current is 136A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 300V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FDAF59N30 Features


the avalanche energy rating (Eas) is 1734 mJ
based on its rated peak drain current 136A.
a 300V drain to source voltage (Vdss)


FDAF59N30 Applications


There are a lot of Rochester Electronics, LLC
FDAF59N30 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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