FDAF59N30
- Mfr.Part #
- FDAF59N30
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 34A TO3PF
- Stock
- 6,165
- In Stock :
- 6,165
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Reach Compliance Code :
- Unknown
- JESD-30 Code :
- R-XSFM-T3
- DS Breakdown Voltage-Min :
- 300V
- Additional Feature :
- FAST SWITCHING
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Series :
- UniFET™
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Surface Mount :
- No
- Qualification Status :
- COMMERCIAL
- Drain-source On Resistance-Max :
- 0.056Ohm
- Pulsed Drain Current-Max (IDM) :
- 136A
- Avalanche Energy Rating (Eas) :
- 1734 mJ
- Power Dissipation-Max :
- 161W Tc
- Drain to Source Voltage (Vdss) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain Current-Max (Abs) (ID) :
- 34A
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 17A, 10V
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-3P-3 Full Pack
- Vgs (Max) :
- ±30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.67pF @ 25V
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- MATTE TIN
- Pbfree Code :
- yes
- Datasheets
- FDAF59N30
N-Channel Tube 56m Ω @ 17A, 10V ±30V 4.67pF @ 25V 100nC @ 10V 300V TO-3P-3 Full Pack
FDAF59N30 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1734 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4.67pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 34A.Peak drain current is 136A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 300V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
FDAF59N30 Features
the avalanche energy rating (Eas) is 1734 mJ
based on its rated peak drain current 136A.
a 300V drain to source voltage (Vdss)
FDAF59N30 Applications
There are a lot of Rochester Electronics, LLC
FDAF59N30 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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