FDAF59N30

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Mfr.Part #
FDAF59N30
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 300V 34A TO3PF
Stock
6,165
In Stock :
6,165

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
3
Reach Compliance Code :
Unknown
JESD-30 Code :
R-XSFM-T3
DS Breakdown Voltage-Min :
300V
Additional Feature :
FAST SWITCHING
Vgs(th) (Max) @ Id :
5V @ 250μA
Series :
UniFET™
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Packaging :
Tube
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
Surface Mount :
No
Qualification Status :
COMMERCIAL
Drain-source On Resistance-Max :
0.056Ohm
Pulsed Drain Current-Max (IDM) :
136A
Avalanche Energy Rating (Eas) :
1734 mJ
Power Dissipation-Max :
161W Tc
Drain to Source Voltage (Vdss) :
300V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Peak Reflow Temperature (Cel) :
Not Applicable
Drain Current-Max (Abs) (ID) :
34A
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
56m Ω @ 17A, 10V
Number of Terminations :
3
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-3P-3 Full Pack
Vgs (Max) :
±30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Input Capacitance (Ciss) (Max) @ Vds :
4.67pF @ 25V
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
MATTE TIN
Pbfree Code :
yes
Datasheets
FDAF59N30
Introducing Transistors - FETs, MOSFETs - Single onsemi FDAF59N30 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-3P-3 Full Pack, Operating Temperature:-55°C~150°C TJ, FDAF59N30 pinout, FDAF59N30 datasheet PDF, FDAF59N30 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDAF59N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDAF59N30


N-Channel Tube 56m Ω @ 17A, 10V ±30V 4.67pF @ 25V 100nC @ 10V 300V TO-3P-3 Full Pack

FDAF59N30 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 1734 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4.67pF @ 25V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 34A.Peak drain current is 136A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 300V.For this transistor to work, a voltage 300V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

FDAF59N30 Features


the avalanche energy rating (Eas) is 1734 mJ
based on its rated peak drain current 136A.
a 300V drain to source voltage (Vdss)


FDAF59N30 Applications


There are a lot of Rochester Electronics, LLC
FDAF59N30 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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