FDAF62N28
- Mfr.Part #
- FDAF62N28
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 280V 36A TO3PF
- Stock
- 1,135
- In Stock :
- 1,135
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-3P-3 Full Pack
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Drain to Source Voltage (Vdss) :
- 280V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 165W Tc
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- FAST SWITCHING
- JESD-30 Code :
- R-XSFM-T3
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 280V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.63pF @ 25V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 144A
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Avalanche Energy Rating (Eas) :
- 1919 mJ
- Reach Compliance Code :
- Unknown
- Drain Current-Max (Abs) (ID) :
- 36A
- Drain-source On Resistance-Max :
- 0.051Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- UniFET™
- Terminal Position :
- Single
- Qualification Status :
- COMMERCIAL
- Rds On (Max) @ Id, Vgs :
- 51m Ω @ 18A, 10V
- Surface Mount :
- No
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Datasheets
- FDAF62N28

N-Channel Tube 51m Ω @ 18A, 10V ±30V 4.63pF @ 25V 100nC @ 10V 280V TO-3P-3 Full Pack
FDAF62N28 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1919 mJ.A device's maximal input capacitance is 4.63pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 36A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 144A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 280V.This transistor requires a 280V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FDAF62N28 Features
the avalanche energy rating (Eas) is 1919 mJ
based on its rated peak drain current 144A.
a 280V drain to source voltage (Vdss)
FDAF62N28 Applications
There are a lot of Rochester Electronics, LLC
FDAF62N28 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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