FDAF69N25
- Mfr.Part #
- FDAF69N25
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 34A TO3PF
- Stock
- 1,930
- In Stock :
- 1,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Additional Feature :
- FAST SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 4.64pF @ 25V
- Series :
- UniFET™
- Current - Continuous Drain (Id) @ 25°C :
- 34A Tc
- Terminal Finish :
- MATTE TIN
- Drain-source On Resistance-Max :
- 0.041Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 1894 mJ
- Pin Count :
- 3
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- DS Breakdown Voltage-Min :
- 250V
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 250V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Vgs (Max) :
- ±30V
- Pulsed Drain Current-Max (IDM) :
- 136A
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Qualification Status :
- COMMERCIAL
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 34A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 115W Tc
- Package / Case :
- TO-3P-3 Full Pack
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 17A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Datasheets
- FDAF69N25

N-Channel Tube 41m Ω @ 17A, 10V ±30V 4.64pF @ 25V 100nC @ 10V 250V TO-3P-3 Full Pack
FDAF69N25 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1894 mJ.A device's maximal input capacitance is 4.64pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 34A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 136A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FDAF69N25 Features
the avalanche energy rating (Eas) is 1894 mJ
based on its rated peak drain current 136A.
a 250V drain to source voltage (Vdss)
FDAF69N25 Applications
There are a lot of Rochester Electronics, LLC
FDAF69N25 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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