FDAF69N25

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Mfr.Part #
FDAF69N25
Manufacturer
onsemi
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
MOSFET N-CH 250V 34A TO3PF
Stock
1,930
In Stock :
1,930

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSFM-T3
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Additional Feature :
FAST SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
4.64pF @ 25V
Series :
UniFET™
Current - Continuous Drain (Id) @ 25°C :
34A Tc
Terminal Finish :
MATTE TIN
Drain-source On Resistance-Max :
0.041Ohm
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
1894 mJ
Pin Count :
3
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
Not Applicable
DS Breakdown Voltage-Min :
250V
Terminal Position :
Single
Drain to Source Voltage (Vdss) :
250V
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Number of Elements :
1
Vgs (Max) :
±30V
Pulsed Drain Current-Max (IDM) :
136A
Number of Terminations :
3
Vgs(th) (Max) @ Id :
5V @ 250μA
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Through Hole
FET Type :
N-Channel
Qualification Status :
COMMERCIAL
Peak Reflow Temperature (Cel) :
Not Applicable
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Drain Current-Max (Abs) (ID) :
34A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
115W Tc
Package / Case :
TO-3P-3 Full Pack
Rds On (Max) @ Id, Vgs :
41m Ω @ 17A, 10V
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tube
Datasheets
FDAF69N25
Introducing Transistors - FETs, MOSFETs - Single onsemi FDAF69N25 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Package / Case:TO-3P-3 Full Pack, Operating Temperature:-55°C~150°C TJ, FDAF69N25 pinout, FDAF69N25 datasheet PDF, FDAF69N25 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDAF69N25 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDAF69N25


N-Channel Tube 41m Ω @ 17A, 10V ±30V 4.64pF @ 25V 100nC @ 10V 250V TO-3P-3 Full Pack

FDAF69N25 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1894 mJ.A device's maximal input capacitance is 4.64pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 34A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 136A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 250V.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FDAF69N25 Features


the avalanche energy rating (Eas) is 1894 mJ
based on its rated peak drain current 136A.
a 250V drain to source voltage (Vdss)


FDAF69N25 Applications


There are a lot of Rochester Electronics, LLC
FDAF69N25 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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