EMB59T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector (Ic) (Max) :

100mA

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Cutoff (Max) :

500nA

Power - Max :

150mW

Surface Mount :

yes

Transition Frequency :

250MHz

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Resistor - Base (R1) :

10k Ω

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-563, SOT-666

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

47k Ω

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Number of Elements :

2

Polarity/Channel Type :

PNP

Terminal Form :

Flat

JESD-30 Code :

R-PDSO-F6

Frequency - Transition :

250MHz

Reach Compliance Code :

not_compliant

Factory Lead Time :

13 Weeks

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Transistor Type :

2 PNP - Pre-Biased (Dual)