EMB51T2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

Resistor - Emitter Base (R2) :

22k Ω

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transition Frequency :

250MHz

Packaging :

Cut Tape (CT)

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Mount :

Surface Mount

Polarity/Channel Type :

PNP

Factory Lead Time :

10 Weeks

Transistor Type :

2 PNP - Pre-Biased (Dual)

Mounting Type :

Surface Mount

Published :

2016

Transistor Element Material :

SILICON

Number of Elements :

2

Number of Terminations :

6

Power - Max :

150mW

Collector Emitter Voltage (VCEO) :

150mV

ECCN Code :

EAR99

Max Power Dissipation :

150mW

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistor - Base (R1) :

22k Ω

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 5mA

Frequency - Transition :

250MHz

Current - Collector Cutoff (Max) :

500nA

Max Collector Current :

30mA

JESD-30 Code :

R-PDSO-F6

Collector Emitter Breakdown Voltage :

50V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR